c^/v , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor TIP2955 description ? excellent safe operating area ? dc current gain- : hfe=20-70@lc = -4a ? collector-emitter saturation voltage- :vce(sa,)=-1.1v(max)@lc = -4a ? complement to type tip3055 applications ? designed for general-purpose switching and amplifier applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic ib pc t, tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current collector power dissipation tc-25 c junction tmperature storage temperature range value -100 -60 -7 -15 -7 90 150 -65-150 unit v v v a a w ?c ?c thermal characteristics symbol rth j-c rth j-a parameter thermal resistance, junction to case thermal resistance, junction to ambient value 1.39 35.7 unit ?c/w c/w ! ? i i > i -^ 3 pin 1.ba3e 2. collector 3. emitter i to-3pn package tu?|j/- i l 1 1 : k a? i?- g "^*^&- 1 ~~"^~ j - -?-r -*- dim a b l. d f f g h j k l n 0 r s u y mm men 19.90 15.50 4.70 0.90 1,90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 1 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5,10 3.45 2.005 6.10 10.10 n ? nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistors TIP2955 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(on) iceo icer icev iebo hpe-1 hfe-2 !s/b fi parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain second breakdown collector current with base forward biased current-gain ? bandwidth product conditions lc=-30ma;lb= 0 ic=-4a;ib=-0.4a ic=-10a;ib=-3.3a lc= -4a ; vce= -4v vce= -30v; ib= 0 vce=-70v;rbe=100q vce=-100v;vbe(off)=-1.5v veb= -7v; lc= 0 lc= -4a ; vce= -4v lc=-10a;vce=-4v vce= -30v, t= 1 .os.nonrepetitive lc= -0.5a ; vce= -10v;ftest= 1 .0mhz min -60 20 5 3.0 2.5 max -1.0 -3.0 -1.8 -0.7 -1.0 -5.0 -5.0 70 unit v v v v ma ma ma ma a mhz 1000 iife-ic characteristics to o>100 o d d 1c- -0.1 -0.2 -0.3 -0,5-0.7-1,0 -2.0 -3.0 -5.0-7.0-10 collector current lc[a] safe operating area -100 rr-30 ?t n ( j ~~ -10 ?^ & -5.0 1 ? 30 d -2.0 !-?? = -0.5 :8i -0.1 - s ^ ii 1.0 mi^ '"?s *^. ___^j, (?-"" ii secondary breakdown limit bondi img wre limit rhermallimiti?v =25"c 60i; m \ s,v i 00 h )m? s ^, n -1.0 -20 -4.0-6.0 -10 -20 -40 -60 collector-emitter voltage vce[vj
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